Events
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Publication in Communications Materials about Josephson junctions grown by MBE Monday, 04 August 2025 14:11 |
Josephson junctions are building blocks of qubits in quantum computers. Researchers from MBE laboratory from our Institute just published a study in Nature Communications Materials showing an important step for the technology of their fabrication. They presented a new approach for growing thin films of superconducting niobium nitride (NbN) on GaN substrates using plasma-assisted molecular beam epitaxy (PAMBE) with indium as a surfactant. The use of indium enabled the growth of NbN thin films with quality suitable for Josephson junction applications. The study demonstrated the world's first NbN/InAlN/NbN Josephson junction fabricated using the MBE method. The junctions achieved a critical current density of 1 kA/cm². This work shows that MBE technology can be fully exploited for the integration of NbN with group III nitrides, opening the path toward a new class of devices. The full article A. Lachowski et al. NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxy Commun Mater 6, 169 (2025) is available at: https://www.nature.com/articles/s43246-025-00891-3
Visit of dr inż. Anna Kafar to Joined Research Centre IspraWednesday, 23 July 2025 17:58 |
We are pleased to share that dr inż. Anna Kafar from our Institute was invited to participate in the visit of Polish Young Scientists to the Joint Research Centre Ispra (JRC Ispra) in Ispra, Italy, held on June 24–26, 2025. The JRC Ispra site is the third largest European Commission facility, originally established in 1960 as a Nuclear Joint Research Centre. Today, it plays a vital role in supporting EU policymaking through scientific research in areas such as sustainable transport, space, security, and climate change. The visit was organized as part of the initiatives related to the recently concluded Polish Presidency of the Council of the European Union. During this meeting, a group of ten young researchers had the opportunity to explore the Centre's history, gain insight into its operations, and establish new scientific collaborations. The JRC Ispra campus is a remarkable research environment, characterized by its wide range of disciplines and state-of-the-art scientific infrastructure. We are particularly grateful to Isabella Cerutti for her valuable time and the opportunity of individual job shadowing.
To see more photos from the visit of Polish Young Scientists to the Joint Research Centre Ispra (JRC Ispra) click the link below. Institute Thursday SeminarFriday, 18 July 2025 13:59 |
Institute of High Pressure Physics PAS invites to the next open Unipress Thursday Seminar that will be given by Prof. Jacques G. Noudem from Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, Caen, France. Title of the talk: „Functional materials processed by Spark Plasma Sintering”. The seminar will be held on Thursday, August 21, 2025 at 3:00 pm in a hybrid mode - at the seminar room in New Technologies building, al. Prymasa Tysiąclecia 98, and through Zoom platform. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl Abstract of the talk is here.
Profesorowie z IWC PAN w gronie członków TNWMonday, 14 July 2025 16:03 |
Z dumą informujemy, że profesorowie Stanisław Krukowski, Wojciech Knap i Marek Potemski pracujący w naszym Instytucie Wysokich Ciśnień PAN zostali wybrani na członków Towarzystwa Naukowego Warszawskiego. Towarzystwo Naukowe Warszawskie zrzesza uczonych powiązani z naukowymi placówkami w Warszawie, których dorobek naukowy zasługuje na specjalne uhonorowanie, a ich praca zawodowa i zaangażowanie w krzewienie nauki oraz praca wskazuje, iż mogą być uznani za Mistrzów dla młodszych kolegów. Informacja o wyborze nowych Członków Towarzystwa Naukowego Warszawskiego zamieszczona jest na stronie TNW w sekcji Aktualności, a lista wszystkich członków Towarzystwa dostępna jest pod linkiem. Gratulujemy!
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Dr inż. Artur Lachowski received SONATINA grantFriday, 01 August 2025 21:06 |
As a result of the SONATINA 9 competition, the National Science Centre has qualified for financing the research project of dr. inż. Artur Lachowski from our Institute. The project is titled "Optimizing the epitaxial growth of niobium nitride for superconducting electronic applications" and will be realized in part in the Leibniz-Institut für Kristallzüchtung (IKZ) in Berlin, Germany. The SONATINA grant provides the funds necessary to cover all project expenses and secure the full-time employment of the PI at a Polish research centre. The PIs are also required to plan and complete a fellowship at a renowned foreign research centre of their choice. More about the SONATINA 9 competition and the results here while the project abstract is available under this link..
Public defense of the PhD dissertation of Manasa, MScMonday, 21 July 2025 08:24 |
A public defense of the doctoral dissertation of Manasa, MSc, will be held on 20 August 2025 (Wednesday) at 01:00 p.m. in the seminar room of the Institute of High Pressure Physics, Polish Academy of Sciences, in Warsaw, 29/37 Sokołowska St. Dissertation title: „Physical properties optimization of iron-based superconductors by high-pressure growth technique” The dissertation and reviews are available here
Insights to the nature of the bonding in nitrides and grapheneFriday, 18 July 2025 13:33 |
Researchers from our Institute used advanced ab initio simulations to unravel how atoms bond in key semiconductor materials like BN, AlN, GaN, InN, and graphene. The calculations confirmed that the valence band of GaN is divided into two separate subbands. The upper subband of GaN is composed of gallium sp and nitrogen p orbitals, while the lower subband consists of metal d and nitrogen s orbitals. Calculation of overlap integrals allowed to determine the bond order in tetrahedrally coordinated semiconductors. According to these results, bonding occurs between resonant p-states of nitrogen and sp3-hybridized metal orbitals in tetrahedral nitrides, allowing tetrahedral symmetry to be maintained. A similar resonant bonding mechanism is observed in hexagonal BN, where the p orbitals of nitrogen create three resonant states necessary for maintaining the planar symmetry of the lattice. BN bonding differs from that in graphene, where carbon states are fully sp2-hybridized. Additionally, π-type bonds in graphene have no ionic contributions, which leads to the formation of Dirac states with linear dispersion close to the K point, closing the band gap Understanding these nuanced bonding mechanisms refines our fundamental picture of how these semiconductors and 2D materials behave and could directly impact the design of next-generation optoelectronic devices. The publication is available in Open Access: Ab Initio Elucidation of the Nature of the Bonding of Tetrahedral Nitrides (BN, AlN, GaN, and InN), Hexagonal BN, and Graphene Paweł Strąk, Konrad Sakowski, Pawel Kempisty, Izabella Grzegory, Agata Kaminska, Stanislaw Krukowski. Materials 2025, 18, 2875.
Figure: The electronic properties of bulk wurtzite gallium nitride (GaN). The panels represent, from the leftmost: band diagram, projected density of states (PDOS) of the Ga (left) and N (right) atoms. Unipress contributions to ICNS-15 conferenceFriday, 11 July 2025 15:20 |
The International Conference on Nitride Semiconductors ICNS-15 has just finished with a great success. ICNS-15 was held in Malmö in Sweden from July 6-11, 2025. The conference featured 881 scientific papers, 57 of which were presented by polish researchers. Our team - 21 people from the Institute of High Pressure Physics - presented 33 scientific papers. We had a Plenary Speaker – prof. Michał Boćkowski, and three invited talks – Dr Anna Kafar, Prof. Paweł Kempisty and Prof. Henryk Turski. Our employees delivered also 7 contributed talks (oral presentations) and 22 poster presentations. Prof. Michał Boćkowski was a panelist in the Rump session "kV Nitride Power Devices: Challenges and Technologies”. We also served as moderators of the individual sessions. The list of the all presentations by Institute's employees is available at the link. Researchers from the Institute of High Pressure Physics were actively involved in the organization and had numerous scientific contributions. The ICSN-15 conference was chaired by Vanya Darakchieva, Lars Samuelson and Piotr Perlin. Prof. Tadek Suski was the Honorary Chair. Prof. Izabella Grzegory was among the Program Co-chairs, supporting Åsa Haglund, the Program Chair. Dr Anna Kafar was a panelist in “Women in Nitrides - diversity and inclusion” event. Special congratulations to the young scientists on their Awards! Muhammed Aktas from the Optoelectronic Devices Laboratory NL15 received the award for the best poster presentation “Low-Temperature Characteristics of PolarizationDoped Nitride Emitters”. Congratulations!
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