Institute of High Pressure Physics

We are pleased to inform you that our colleague from laboratory NL-12, Dr. Piotr Kruszewski, will represent our Institute at the ICDS-33 conference - 33rd International Conference on Defects in Semiconductors, which will take place from September 14 to 19, 2025, in Shanghai, China. ICDS conference is one of the most prestigious international conferences dedicated to defect research in semiconductors, and the first conference of this series was initiated in 1959 in Gatlinburg, Tennessee, USA.

A significant honor for our Institute is the fact that Dr. Piotr Kruszewski will deliver two oral presentations in Shanghai. The first one is focused on defect studies in Al_xGa_1-xN layers and is titled "On the origin of the electrically active defects E1 and E3 in GaN and dilute Al_xGa_1-xN films grown on Ammono-GaN substrates" while the second presentation addresses defects in gallium oxide (Ga₂O₃) and the influence of an electric field on the defect properties Ec-0.18 eV in crystals grown by the Czochralski method. The full title of this paper is "The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga₂O₃ crystals grown by the Czochralski method"

More information about the conference, as well as the detailed program, can be found at https://www.icds2025.org/

A public defense of the doctoral dissertation of Mikołaj Chlipała, MSc Eng, will be held on 2 September 2025 (Tuesday) at 10:00 a.m. in the seminar room of the Institute of High Pressure Physics, Polish Academy of Sciences, in Warsaw, 29/37 Sokołowska St.

Dissertation title: „Harnessing built-in fields in group III-nitride light emitters grown by molecular beam epitaxy”

Full text of the announcement

The dissertation and reviews are available here

As a result of the SONATINA 9 competition, the National Science Centre has qualified for financing the research project of dr. inż. Artur Lachowski from our Institute. The project is titled "Optimizing the epitaxial growth of niobium nitride for superconducting electronic applications" and will be realized in part in the Leibniz-Institut für Kristallzüchtung (IKZ) in Berlin, Germany.

The SONATINA grant provides the funds necessary to cover all project expenses and secure the full-time employment of the PI at a Polish research centre. The PIs are also required to plan and complete a fellowship at a renowned foreign research centre of their choice.

More about the SONATINA 9 competition and the results here while the project abstract is available under this link..