Institute of High Pressure Physics

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 11.12.2023 at 14:00.

Speaker: Prof. Matthew P. Halsall (Department of Electrical and Electronic Engineering, University of Manchester)

Title: Electrical and Optical Spectroscopies applied to point and extended defects in Wurtzite and Cubic Nitride semiconductors.

Abstract: Link

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 04.12.2023 at 14:00.

Speaker: Prof. Michał Boćkowski (Institute of High Pressure Physics PAS)

Title: Towards GaN Substrates for Electronic and Optoelectronic Devices

Abstract: Link

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Ion implantation and annealing became recently an interesting route to change electrical properties of GaN, enabling for instance to go beyond the epitaxy capabilities in terms of doping. Understanding the process of defect formation seems to be crucial for the contol of the material properties after ion implantation.

Institute of High Pressure Physics invites to an open seminar of prof. Akira Uedono from the Faculty of Pure and Applied Sciences, University of Tsukuba, Japan. The title of his presentation is "Vacancy-type defects in GaN studied by positron anihilation spectroscopy".

The seminar will be held in person at Prymasa Tysiąclecia 98 (seminar room, second floor) in the Institute of High Pressure Physics on Friday, November 24, 2023 at 3:00 pm.

Polarization doping became recently a very attractive alternative to magnesium (Mg) acceptor doping. It offers flexibility of tuning carrier concentration through adjustments in layer thickness and composition gradient. Furthermore, it maintains a stable carrier concentration irrespective of temperature fluctuations that is well-suited for cryogenic device applications.

In the next Thursday UNIPRESS seminar, Muhammed Aktas from Optoelectronic Device Laboratory of our Institute will present laser diodes that implement the polarization doping. He will compare the device performance at room and cryogenic temperatures. We invite you to his talk entitled "Polarization doped P-cladding for InGaN Laser". The abstract can be downloaded here.

The seminar will be held on-line through Zoom platform on Thursday, November 30, 2023 at 15:00. To get the link to join the seminar, please contact us at dyrekcja@unipress.waw.pl