Institute of High Pressure Physics

The review paper by Stanisław Krukowski, Paweł Kempisty and Paweł Strak, entitled "Charge control of semiconductor surfaces as elucidated by ab initio calculations – A review" has just been published in Progress in Surface Science 101(1), 100809 (2026), https://doi.org/10.1016/j.progsurf.2025.100809.

The paper reviews 15 years of research progress on the role of electric charge at semiconductor surfaces, highlighting how this work has contributed to the development of new scientific concepts in the field. Notably, much of the advancement stems from the conceptual, computational, and analytical efforts of scientists at IHPP PAS. Congratulations to the team, and we encourage readers to explore this review article.

DRIP21 – the 21st International Conference on Defects Recognition, Imaging and Physics in Semiconductors will take place in Warsaw, Poland, from 30 August to 3 September 2026.

The conference is organized by the Institute of High Pressure Physics PAS and Institute of Physics PAS and is part of a long-standing, internationally recognized series of scientific meetings devoted to the physics of defects in semiconductor materials. The DRIP21 program will address key topics including defects in wide-bandgap semiconductors, 2D materials and perovskites, quantum and spin defects, as well as advanced techniques for defect detection, imaging, and modeling. The Organizing Committee Chair is prof. Julita Smalc-Koziorowska from the Laboratory of Semiconductor Characterization (NL-12).

Abstract submission has just opened and researchers are invited to contribute. More information is available at https://drip21.pl/.

Zapraszamy pracowników IWC PAN na praktyczne szkolenie pt. "RepOD – jak przygotowywać i udostępniać dane", które poprowadzi Karol Kawka z Laboratorium Krystalizacji NL-3 naszego Instytutu.

Szkolenie będzie mieć formę tutorialu i odbędzie się on-line w czwartek 12.02.2026, godz. 15:00. Szczegółowe informacje i link do spotkania Zoom w komunikacji mejlowej.

The Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University (Japan) celebrated its 10th anniversary in December 2025. Due to the active cooperation between IMaSS and our institute, we were invited to participate in this celebration. It was an honor for IHPP PAS and a meaningful sign of the strong relationship and scientific cooperation between our institutions.

On the occasion of the anniversary, Professor Michał Boćkowski, Director of the Institute of High Pressure Physics PAS, presented IMaSS with a commemorative trophy with GaN crystal inside. In response, Professor Tomomi Uchiyama, Director of IMaSS, sent an official letter of appreciation to our Institute, emphasizing the significance of this thoughtful gesture and expressing his hope for continued collaboration and further development of academic ties between the institutions.

We would like to thank IMaSS, Nagoya University for the warm welcome and kind words, and we wish continued success in its research activities.

Professor Tomomi Uchiyama, Director of IMaSS (right), and Professor Hiroshi Amano, Director of CIRFE (IMaSS, Nagoya University) (left), with the commemorative trophy from the Institute of High Pressure Physics.