Institute of High Pressure Physics

Professor Michał Boćkowski, Director of the Institute of High Pressure Physics PAS, has been invited to deliver a lecture at the international WOCSDICE - EXMATEC 2025 conference, which will take place from 16 to 20 June 2025 in Cádiz, Spain.

This joint event merges the 48th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) and the 19th Workshop on Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC) – two renowned conferences in the field of compound semiconductor materials and technologies.

Professor Boćkowski will present an invited talk entitled “Shaping the Future of GaN Crystal Growth Technology”, highlighting IWC PAN's latest progress in gallium nitride (GaN) crystal growth and its applications in high-power electronics and wide bandgap technologies.

Conference website: https://we2025.eu

Dnia 26 maja 2025 r. (poniedziałek) o godz. 13:00 w sali seminaryjnej Instytutu Wysokich Ciśnień Polskiej Akademii Nauk w Warszawie, ul. Sokołowska 29/37, odbędzie się publiczna obrona rozprawy doktorskiej mgr inż. Joanny Łoś.

Temat rozprawy: „Charakterystyka zjawisk przedprzejściowych i dynamiki w materiałach ciekłokrystalicznych i ich nanokoloidach”

Pełna treść zawiadomienia

Rozprawa doktorska i recenzje dostępne są na stronie BIP IWC PAN.

The National Center for Research and Development (NCBiR) as the Intermediate Institution for Priority I FENG 2021 has completed the evaluation of projects submitted in the call no. FENG.01.01-IP.01-005/23 – SMART Path Projects implemented in consortia. The projects were applied for by consortia with or without the participation of a large enterprise. In the latter category, the first place in the ranking list of co-financed projects was taken by the project implemented in the consortium SEEN Semiconductors Sp. z o. o. and the group of Prof. Michał Leszczyński from the NL-12 Laboratory of Semiconductor Characterization.

There are 51 projects (out of 566 applications) that received co-financing for the amount of PLN 686,870,078.42.

Project Title: Conductive GaN/AlGaN/SiC structures for the construction of new generations of vertical electronic devices. Project acronym: "TranzGaN"

The aim of the project is to develop a technology for the growth of a conductive AlGaN:Si buffer on SiC substrates using the MOVPE method. For this purpose, the flow of reagents, temperature, growth pressure and disorientation of SiC substrates will be optimized. The result of this is to prepare a buffer layer with good electrical conductivity and the lowest possible dislocation density in the GaN layer grown on this buffer. This will allow for the production of epitaxial structures of vertical devices such as CAVET transistors, p-i-n diodes or laser diodes, which will significantly expand the scientific experience of the Institute.

Project value: PLN 4,455,429.57

European Funds contribution: PLN 3,752,662.00

Dnia 20 maja 2025 r. (wtorek) o godz. 14.00 w sali seminaryjnej Instytutu Wysokich Ciśnień Polskiej Akademii Nauk w Warszawie, ul. Sokołowska 29/37, odbędzie się publiczna obrona rozprawy doktorskiej mgr. inż. Jakuba Kalabińskiego.
Temat rozprawy: „Charakterystyka równowag fazowych w mieszaninach o ograniczonej mieszalności z wykorzystaniem nowej, autorskiej metody określenia krzywych współistnienia faz”

Pełna treść zawiadomienia

Rozprawa doktorska i recenzje dostępne są na stronie BIP IWC PAN.