Institute of High Pressure Physics

We are pleased to inform you that the Center for Nitride Semiconductor Physics and Technology "GaN-Unipress" has received support under Investment A2.4.1 Investments in Expanding the Research Potential of the National Recovery and Resilience Plan. The Center, founded by Prof. Dr. Hab. Izabella Grzegory, Corresponding Member of the Polish Academy of Sciences and listed among the strategic research infrastructures on the Polish Research Infrastructure Map (decision number DIR/PMIB/2020/99), received support amounting to PLN 75,759,580.00 with a total eligible project cost of PLN 89,144,580.00.

More about the Center for Nitride Semiconductor Physics and Technology "GaN-Unipress" in this file.

The infrastructure for the production of quantum structures for high-power and high-frequency electronic devices based on nitride semiconductors and gallium nitride (GaN) substrates with a diameter of 4 inches will be built within the project. The Institute of High Pressure Physics of the Polish Academy of Sciences is currently the only European manufacturer of GaN substrates.