Instytut Wysokich Ciśnień

The 14th International Conference on Nitride Semiconductors (ICNS-14) will be held on November 12-17, 2023 in Fukuoka, Japan. The conference will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition.

Scientists from Unipress - Institute of High Pressure Physics Polish Academy of Sciences will present their latest results in numerous contributions: one invited lecture (Michał Boćkowski), 17 oral presentations and 17 poster presentations. We also contributed as co-authors to other research prestented during this conference. Full ICNS-14 program can be found here.

Invited talk:

Towards GaN Substrates for High-power Electronic Devices, Michal Bockowski, Tomasz Sochacki, Malgorzata Iwinska, Robert Kucharski

Oral presentations:

1         Performance of oxide-based versus to metal-based contacts for InGaN laser diodes, Szymon Grzanka, Eliana Kamińska, Aleksandra Wójcicka, Michał Borysiewicz, Piotr Perlin

2         Evolution of the Quantum Confined Stark Effect with external electrical or optical excitation in InGaN/GaN structures with single Quantum Well of different width, Tadek Suski, Grzegorz Staszczak, Katarzyna Pieniak, Anna Kafar, Witold Trzeciakowski, Grzegorz Muzioł, Marcin Siekacz, Czesław Skierbiszewski

3         Ultra-high pressure annealing of Mn-implanted HVPE-GaN, Piotr Jaroszynski, Kacper Sierakowski, Rafal Jakiela, Marcin Turek, Michal Fijalkowski, Tomasz Sochacki, Michal Bockowski

4         Relation between metal vacancy concentration and diffusion of silicon, magnesium and hydrogen in AlGaInN epi structures, Mike Leszczynski, Ewa Grzanka, Mikolaj Grabowski, Pawel Michalowski, Roman Hrytsak, Grzegorz Muziol, Czeslaw Skierbiszewski, Jakub Cizek, Alice Hospodkova, Rafal Jakiela, Robert Czernecki, Andrzej Turos

5         Influence of carrier gas (Nitrogen or Hydrogen) on the properties of Mg-doped GaN/AlGaN layers grown by MOVPE technique, Robert Czernecki, Ewa Grzanka, Rafal Jakiela, Elzbieta Litwin-Staszewska, Szymon Grzanka, Mike Leszczynski

6         Lateral and Vertical Diffusion of Magnesium in Ion-implanted HVPE-GaN, Kacper Pawel Sierakowski, Piotr Jaroszynski, Rafal Jakiela, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Marcin Turek, Michal Bockowski

7         Preliminary Studies on Halide Vapor Phase Epitaxy of AlGaN Alloy on GaN Substrates, Tomasz Sochacki, Slawek Sakowski, Pawel Kempisty, Piotr Jaroszynski, Kacper Sierakowski, Boleslaw Lucznik, Michal Fijalkowski, Michal Bockowski

8         Development of micropattern active region for improving the high In content InGaN quantum wells, Adam Brejnak, Anna Kafar, Conny Becht, Krzysztof Gibasiewicz, Jacek Kacperski, Lucja Marona 1,2 , Szymon Grzanka, Ulrich Theodor Schwarz, Piotr Perlin

9         Large critical thickness of InGaN grown by plasma-assisted MBE, Greg Muziol, Marcin Krysko, Marcin Siekacz, Anna Feduniewicz-Zmuda, Grzegorz Staszczak, Ewa Grzanka, Julita Smalc-Koziorowska, Czeslaw Skierbiszewski

10     Exploring the influence of fabrication methods on the optoelectronic performance of µLEDs, Krzysztof Gibasiewicz, Anna Kafar, Łucja Marona, Katarzyna Piotrowska-Wolińska, Jacek Kacperski, Tadeusz Suski, Piotr Perlin

11     Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Michał Bockowski

12     Fundamental Studies on Crystallization and Reaching the Equilibrium Shape of GaN Crystal in Basic Ammonothermal Method, Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L Weyher, Lutz Kirste, Malgorzata Iwinska, Michal Bockowski

13     Evolution of temperature and ammonia flow at selected time points of alkaline-ammonothermal growth of gallium nitride crystals, Marek Zak, Pawel Kempisty, Boleslaw Lucznik, Robert Kucharski, Michal Bockowski

14     Characterization of 430nm - InAlGaN laser diode with polarization doped p-cladding layer, Muhammed Aktas, Anna Kafar, Łucja Marona, Szymon Grzanka, Szymon Stanczyk, Przemysław Wisniewski, Piotr Perlin

15     High nitrogen pressure growth of hexagonal BN using Ni-Cr solvent, Bohdan Sadovyi, Petro Sadovyi, Andrii Nikolenko, Viktor Strelchuk, Alexandra Ibanez, Pierre Valvin, Guillaume Cassabois, Bernard Gil, Izabella Grzegory

16     Towards light combiners using InAlGaN waveguides, Anna Kafar, Kiran Saba, Adam Brejnak, Krzysztof Gibasiewicz, Jacek Kacperski, Lucja Marona, Szymon Grzanka, Piotr Perlin

17     Ultra-high-pressure doping of gallium nitride with Europium, Piotr Jaroszynski , Ewa Grzanka, Mikolaj Grabowski, Grzegorz Staszczak, Rafal Jakiela, Kacper Sierakowski, Igor Prozheev, Filip Tuomisto 3 , Michal Bockowski

Poster presentations:

1         Crystallization of HVPE-GaN on Semi-polar Ammonothermal GaN Seeds. Analysis of Growth Conditions, Tomasz Sochacki, Piotr Jaroszynski, Kacper Sierakowski, Boleslaw Lucznik, Michal Fijalkowski, Michal Bockowski

2         Analysis of Zn Diffusion in Various Crystallographic Directions of GaN Grown by HVPE, Kacper Pawel Sierakowski, Rafal Jakiela , Piotr Jaroszynski , Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Marcin Turek, Akira Uedono, Michael A. Reshchikov, Michal Bockowski

3         HVPE GaN:Ge vs Ion-Implanted HVPE GaN: Electrical Properties Investigation, Kacper Pawel Sierakowski, Piotr Jaroszynski, Rafal Jakiela, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Marcin Turek, Michal Bockowski

4         Influence of Growth Conditions on Impurity Incorporation During Crystallization of High Purity HVPE-GaN Layers, Tomasz Sochacki, Piotr Jaroszynski, Kacper Sierakowski, Michal Fijalkowski, Leszek Konczewicz, Malgorzata Iwinska, Jan L Weyher, Rafal Jakiela, Michal Bockowski

5         Temperature depended structural and optical changes in InGaN QWs, Ewa Grzanka, Pawel P Michalowski, Szymon Grzanka, Roman Hrytsak, Julita Smalc-Koziorowska, Artur Lachowski, Mikolaj Grabowski, Robert Czernecki, Michal Leszczynski

6         Development of NPN structures for Vertical GaN Trench-MOSFETs, Pawel Prystawko, Ewa Grzanka, Andrzej Taube, Maciej Kaminski

7         Effect of Threading Dislocations on the Diffusion of Implanted Donors and Acceptors in Gallium Nitride, Malgorzata Iwinska, Kacper Sierakowski, Piotr Jaroszynski, Michal Bockowski

8         Gain measurements using Hakki-Paoli method, Szymon Stanczyk, Anna Kafar, Piotr Perlin

9         High-pressure study of color centers emitting in 3.3–4 eV spectral region in hexagonal boron nitride, Agata Kaminska, Kamil Koronski, Nikolai D. Zhigadlo, Christine Elias, Guillaume Cassabois, Bernard Gil

10     Widening emission spectrum of nitride superluminescent diodes. Selected approaches to the active region, Grzegorz Staszczak, Szymon Grzanka, Łucja Marona, Ewa Grzanka, Julita Smalc-Koziorowska, Grzegorz Targowski, Grzegorz Muzioł, Anna Kafar, Piotr Perlin, Czesław Skierbiszewski, Tadeusz Suski

11     A numerical study of UV AlGaN heterostructures with polarization doping, Konrad Sakowski, Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Yoshihiro Kangawa, Jacek Piechota, Stanislaw Krukowski

12     Investigation of AlGaN(0001) properties through DFTcalculations, Pawel Strak, Ashfaq Ahmad, Karol Kawka, Pawel Kempisty

13     Ab initio thermodynamic study of the metallic surface wetting layer during MBE (In)GaN growth and its consequences for dopants incorporation, Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa

14     Imitative misfit dislocations – plastic deformation of GaN adjacent to strained InGaN, Joanna Moneta, Grzegorz Staszczak, Ewa Grzanka, Piotr Tauzowski, Paweł Dłużewski, Julita Smalc-Koziorowska

15     Anisotropy of strain state and crystallographic tilt of (0001) InGaN on GaN Templates, Joanna Moneta, Marcin Krysko, Jaroslaw Z. Domagala, Ewa Grzanka, Michal Leszczynski, Julita Smalc-Koziorowska

16     Observation of Nitrogen Vacancies in Semi-Insulating Ammonothermal GaN:Mg, Marcin Zajac, Leszek Konczewicz, Elzbieta Litwin Staszewska, Ryszard Piotrzkowski, Robert Kucharski, Pawel Kaminski, Roman Kozlowski

17     Towards long lifetime and ultra-low losses InGaN laser diodes by means of tunnel junction MOVPE structures, Lucja Marona, Szymon Grzanka, Julita Smalc Koziorowska, Krzysztof Gibasiewicz, Piotr Perlin