Instytut Wysokich Ciśnień

SPIE Photonics West is world’s largest photonics technologies event. Scientists from our Institute will contribute to the SPIE Photonics West 2024, Gallium Nitride Materials and Devices XIX conference that will take place from 29 January to 1 February 2024 in San Fransisco (USA). The Program can be browsed here.

Note that Unipress has 3 invited papers (all by female researchers) and 5 oral presentations.

Invited papers:

Karolina Grabianska, Robert Kucharski, Michal Bockowski - Challenges and prospects of ammonothermal GaN crystal growth and substrates fabrication

Joanna Moneta, Greg Muziol, Marcin Krysko, Tobias Schulz, Robert Kernke, Carsten Richter, Martin Albrecht, Julita Smalc-Koziorowska - Understanding the plastic relaxation of strained InGaN layers towards substrates for nitride-based red light emitters

Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Slowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski - Fabrication method of GaN-air channels for embedded photonic structures

Oral presentations:

Adam Brejnak, Anna Kafar, Conny Becht, Krzysztof Gibasiewicz, Jacek Kacperski, Lucja Marona, Szymon Grzanka, Ulrich T. Schwarz, Piotr Perlin - Growth of high indium content quantum wells on micropatterned substrates

Michal Bockowski, Kacper Sierakowski, Piotr Jaroszynski, Malgorzata Iwinska - Effect of Threading Dislocations on the Diffusion of Implanted Donors and Acceptors in Gallium Nitride

Anna Kafar, Adam Brejnak, Krzysztof Gibasiewicz, Jacek Kacperski, Lucja Marona, Szymon Grzanka, Piotr Perlin - Characterization of losses in InAlGaN bent waveguides

Piotr Perlin, Muhammed Aktas, Lucja Marona, Anna Kafar, Szymon Grzanka - Development of efficient visible InGaN laser diodes employing polarization doped p-type layers

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, Czeslaw Skierbiszewski - Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy