Instytut Wysokich Ciśnień

Decyzją Dyrektora Narodowego Centrum Nauki DEC-2017/27/L/ST7/03283
został przyznany projekt DAINA 1

Terahertzowe wzbudzenia plazmowe w jednowymiarowych tranzystorach GaN/AlGaN

Kierownik projektu Dr Maciej Sakowicz


Okres realizacji od 2019-01-01 do 2021-12-31 (36 miesiecy)


Nr rej. 2017/27/L/ST7/03283

Publikacje

2022

1. Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
   Roman B Adamov, Daniil Pashnev, Vadim A Shalygin, Maria D Moldavskaya, Maxim Ya Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Kryśko, Maciej Sakowicz, Irmantas Kašalynas
   MDPI Materials 2022, 15, 1118
   IF 3.623

2021

1. Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
   Roman B Adamov, Daniil Pashnev, Vadim A Shalygin, Maria D Moldavskaya, Maxim Ya Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Kryśko, Maciej Sakowicz, Irmantas Kašalynas
   MDPI Applied Sciences 2021, 11, 6053
   IF 2.679
2. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
   M. Dub, P. Sai, M. Sakowicz, L. Janicki, D.B. But, P. Prystawko, G. Cywiński, W. Knap and S. Rumyantsev
   MDPI Micromachines 2021, 12, 1343
   IF 2.891

2020

1. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
   Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap and Sergey Rumyantsev
   MDPI Materials 2020, 13, 4140
   IF 3.057
2. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
   Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas
   MDPI Micromachines 2020, 11, 1131
   IF 2.523
3. Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field
   I.Grigelionis, N.Diakonova, W.Knap, F.Teppe, P.Prystawko, I.Kašalynas
   Solid State Communications 2020, 320, 114019
   IF 1.804
4. Investigation of n-type gallium nitride grating for applications in coherent thermal sources
   Vytautas Janonis, Saulius Tumėnas, Pawel Prystawko, Jacek Kacperski, Irmantas Kašalynas
   Applied Physics Letters 2020, 116, 112103
   IF 3.791

2019

1. Low frequency noise and trap density in GaN/AlGaN field effect transistors
   P. Sai, J. Jorudas, M. Dub, M. Sakowicz, V. Jakštas, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap and S. Rumyantsev
   Appl. Phys. Lett. 115, 183501 (2019)
   IF 3.521
2. Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
   Ignas Grigelionis, Justinas Jorudas, Vytautas Jakštas, Vytautas Janonis, Irmantas Kašalynas, Pawel Prystawko, Piotr Kruszewski, Michal Leszczyński
   Materials Science in Semiconductor Processing 93 (2019) 280
   IF 3.927

1. Optimization of AlGaN/GaN EdgeFETs for terahertz detection by optimization of ohmic contacts
   M. Dub, M. Sakowicz, P. Sai, D. B. But, P. Prystawko, G. Cywiński,S. Rumyantsev, W. Knap
   Lithuania-Poland Workshop on Physics and Technology, Vilnius (2019), Lithuania
2. AlGaN/GaN EdgeFET with two lateral Schottky barrier gates as detector in sub-THz range
   P. Sai, D. B. But, G. Cywiński, S. Rumyantsev, M. Sakowicz, M. Dub, P. Prystawko, W. Knap
   XI Symposium of Ph.D Students, Serock, Poland
3. Sub-THz detection by lateral high electron mobility devices based on AlGaN/GaN heterostructures
   P. Sai, D. B. But, G.  Cywiński, S. Rumyantsev, M. Sakowicz, M. Dub, W. Knap
   Jaszowiec 2019, Szczyrk -International School and Conference on the Physics of Semiconductors
4. Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation
   P. Sai, D. B. But, M. Dub, M. Sakowicz, B. Grzywacz, P. Prystawko, G. Cywinski,, W. Knap, S. Rumyantsev
   ESSDERC-ESSCIRC Conference (2019), Cracow, Poland
5. Noise Characterization of GaN/AlGaN High Electron Mobility Transistor
   P. Sai, J. Jorudas, M. Dub, M. Sakowicz, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap, S. Rumyantsev
   French-Polish THz Science and Technology Meeting (2019), Warsaw, Poland
6. AlGaN/GaN Heterostructures for Plasma Wave Detection and Emission in THz Regime
   M. Sakowicz, P. Sai, D. B. But, G. Cywiński, M. Dub, I.  Kasalynas, P. Prystawko, S. Rumyantsev, W. Knap
   CENTERA THz DAYS 2019, Warsaw, Poland (invited talk)
7. THz Detectors Based on GaN/AlGaN Lateral Schottky Barrier Diodes
   G. Cywiński, P. Sai, M. Dub, M. Sakowicz, D. B. But, P. Prystawko, W. Knap, S. Rumyantsev
   French-Polish THz Science and Technology Meeting (2019), Warsaw, Poland

1. Optimization of Al/GaN EdgeFETs for terahertz detection by regrowth of ohmic contacts
   M. Dub, M. Sakowicz, P. Sai, D. But, P. Prystawko, G. Cywiński, S. Rumyantsev, W. Knap
   Jaszowiec 2019, Szczyrk -International School and Conference on the Physics of Semiconductors