Instytut Wysokich Ciśnień

Decyzją Dyrektora Narodowego Centrum Nauki DEC-2016/22/E/ST7/00526 został przyznany projekt Sonata BIS  "Lateralne diody Schottky jako nowatorskie narzędzia do badania wysokoczęstotliwościowych właściwości struktur azotkowych".

Kierownik projektu Dr hab. inż. Grzegorz Cywiński

Okres realizacji od 2017-04-04 do 2022-04-03 (60 miesięcy)

Nr rej. 2016/22/E/ST7/00526

Publikacje

2021

1. Graphene/AlGaN/GaN RF Switch
   Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev and Grzegorz Cywinski
   Published: 31 October 2021
   Micromachines 2021, 12, 1343.
   https://www.mdpi.com/2072-666X/12/11/1343
   https://doi.org/10.3390/mi12111343
   IF 2.891
2. Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting
   P. Sai, S. O. Potashin, M. Szoła, D. Yavorskiy, G. Cywiński, P. Prystawko, J. Łusakowski, S. D. Ganichev, S. Rumyantsev, W. Knap, and V. Yu. Kachorovskii
   Phys. Rev. B 104, 045301 (2021) - Published 2 July 2021
   https://journals.aps.org/prb/pdf/10.1103/PhysRevB.104.045301
   IF 3.575
3. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.
   Dub, M.; Sai, P.; Sakowicz, M.; Janicki, L.; But, D.B.; Prystawko, P.; Cywinski, G.; Knap,W.; Rumyantsev, S.
   Published: 19 June 2021
   Micromachines 2021, 12, 721.
   https://doi.org/10.3390/mi12060721
   IF 2.891

Konferencje (2021)

• THz photocurrent magneto-oscillations in GaN-based asymmetric grating gate structures
  P. Sai, M. Szoła, S.O. Potashin, D. Yavorskiy, G. Cywiński, P. Prystawko, J. Łusakowski, S. D. Ganichev, S. Rumyantsev, V. Yu. Kachorovskii, W. Knap
  46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2021, pp. 1-2, doi: 10.1109/IRMMW-THz50926.2021.9567574.
• AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime
  M. Sakowicz, P. Sai, D. B. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev, W. Knap
  Proceedings Volume 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV; 116850C (2021)
  https://doi.org/10.1117/12.2576870
  Event: SPIE OPTO, 2021, Online Only

2020

1. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
   Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap and Sergey Rumyantsev
   MDPI Materials 2020, 13, 4140
   IF 3.057

2019

1. Low frequency noise and trap density in GaN/AlGaN field effect transistors
   P. Sai, J. Jorudas, M. Dub, M. Sakowicz, V. Jakštas, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap and S. Rumyantsev
   Appl. Phys. Lett. 115, 183501 (2019)
   IF 3.521
2. Magneto-transport in inverted HgTe quantum wells
   Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki, Benoit Jouault, Christophe Consejo, Wilfried Desrat, Magdalena Majewicz, Alexander M. Kadykov, Kirill E. Spirin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dmytro B. But, Frederic Teppe, Jerzy Wróbel, Grzegorz Cywiński, Sławomir Kret, Tomasz Dietl & Wojciech Knap
   npj Quantum Materials 4, Article number: 13 (2019)
3. AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
   P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap and G. Cywiński
   Semiconductor Science and Technology 34 (2019) 024002
   IF 2.28
4. Features of the Formation of Ohmic Contacts to n+-InN
   P.O. Sai, N.V. Safryuk-Romanenko, D.B. But, G. Cywiński, N.S. Boltovets, P.N. Brunkov, N.V. Jmeric, S.V. Ivanov, V.V. Shynkarenko
   Ukrainian Journal of Physics, 64(1), 56 (2019)

1. Optimization of AlGaN/GaN EdgeFETs for terahertz detection by optimization of ohmic contacts
   M. Dub, M. Sakowicz, P. Sai, D. B. But, P. Prystawko, G. Cywiński,S. Rumyantsev, W. Knap
   Lithuania-Poland Workshop on Physics and Technology, Vilnius (2019), Lithuania
2. Electrical and noise characteristics of lateral GaN/AlGaN. Schottky diodes and FETs for THz applications
   P. Sai
   French-German Terahertz Conference (FGTC2019), Kaiserslautern, Germany
3. Sub-terahertz detection by lateral  GaN/AlGaN devices
   P. Sai
   French-German Terahertz Conference (FGTC2019), Kaiserslautern, Germany
4. AlGaN/GaN EdgeFET with two lateral Schottky barrier gates as detector in sub-THz range
   P. Sai, D. B. But, G. Cywiński, S. Rumyantsev, M. Sakowicz, M. Dub, P. Prystawko, W. Knap
   XI Symposium of Ph.D Students, Serock, Poland
5. Sub-THz detection by lateral high electron mobility devices based on AlGaN/GaN heterostructures
   P. Sai, D. B. But, G.  Cywiński, S. Rumyantsev, M. Sakowicz, M. Dub, W. Knap
   Jaszowiec 2019, Szczyrk -International School and Conference on the Physics of Semiconductors
6. Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation
   P. Sai, D. B. But, M. Dub, M. Sakowicz, B. Grzywacz, P. Prystawko, G. Cywinski,, W. Knap, S. Rumyantsev
   ESSDERC-ESSCIRC Conference (2019), Cracow, Poland
7. Noise Characterization of GaN/AlGaN High Electron Mobility Transistor
   P. Sai, J. Jorudas, M. Dub, M. Sakowicz, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap, S. Rumyantsev
   French-Polish THz Science and Technology Meeting (2019), Warsaw, Poland
8. AlGaN/GaN Heterostructures for Plasma Wave Detection and Emission in THz Regime
   M. Sakowicz, P. Sai, D. B. But, G. Cywiński, M. Dub, I.  Kasalynas, P. Prystawko, S. Rumyantsev, W. Knap
   CENTERA THz DAYS 2019, Warsaw, Poland (invited talk)
9. THz Detectors Based on GaN/AlGaN Lateral Schottky Barrier Diodes
   G. Cywiński, P. Sai, M. Dub, M. Sakowicz, D. B. But, P. Prystawko, W. Knap, S. Rumyantsev
   French-Polish THz Science and Technology Meeting (2019), Warsaw, Poland

1. Optimization of Al/GaN EdgeFETs for terahertz detection by regrowth of ohmic contacts
   M. Dub, M. Sakowicz, P. Sai, D. But, P. Prystawko, G. Cywiński, S. Rumyantsev, W. Knap
   Jaszowiec 2019, Szczyrk -International School and Conference on the Physics of Semiconductors
2. Edge FET Terahertz Detector Based on Two Lateral Schottky Barrier Gates
   P. Sai
   Joint ITN CELTA & TeraApp Summer School 29th International Travelling Summer School on Microwaves and Lightwaves (2019), Frankfurt, Germany

2018

1. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
   G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev
   Appl. Phys. Lett. 112, 133502 (2018)
   IF 3.411
2. An effective method for antenna design in field effect transistor terahertz detectors
   Zhang Bo-Wen, Yan Wei, Li Zhao-Feng, Bai Long, Cywinski Grzegorz, Yahniuk Ivan, Szkudlarek Krzesimir, Skierbiszewski Czesław, Przybytek Jacek, But Dmytro B., Coquillat Dominnique, Knap Wojciech, Yang Fu-Hua
   The Journal of Infrared and Millimeter Waves (JIRMW) 37, 398-392, (2018)
   IF 0.387
3. THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
   J. Marczewski, D. Coquillat, W. Knap, C. Kolacinskia, P. Kopyt, K. Kucharski, J. Lusakowski, D. Obrebski, D. Tomaszewski, D. Yavorskiy, P. Zagrajek, R. Ryniec, N. Palka
   Opto-Electronics Review, Volume 26, Issue 4, Pages 261-269 (2018)
   IF  1.156

Konferencje (2018)

• Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN
  G. Cywinski ; P. Sai ; I. Yahniuk ; P. Kruszewski ; B. Grzywacz ; J. Przybytek ; P. Prystawko ; A. Khachapuridze; K. Nowakowski-Szkudlarek ; W. Knap ; P. Wisniewski ; B. Stonio ; G. S. Simin ; S. L. Rumyantsev
  2018 22nd International Microwave and Radar Conference (MIKON), Pages: 715 - 718
  IEEE Conferences (2018)
• Millimetre Band Detectors Based on GaN/AlGaN HEMT
  D. B. But, P. Sai, I. Yahniuk, G. Cywiński, N. Dyakonova, W. Knap, Z. Bo-Wen, Y. Wei, L. Zhao Feng, Y. Fu-Hua; Oral presentation
  May 14-17, 2018, Poznań, Poland, MIKON 2018, (M30: Milimeter-wave and sub-THz technology)

Prezentacje ustne

• GaN-based transistors for THz radiation detection
  G. Cywiński P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap Invited talk
  March, 12-15, 2018, Nizhny Novgorod, Russia, XXII Symposium “Nanophysics and Nanoelectronics”
• EdgeFET Devices Fabricated on 2DEG GaN/AlGaN Heterostructures for Basic and Applied Sciences
  G. Cywiński, P. Sai, D.B. But, P. Prystawko, M. Grabowski,  P. Kruszewski,  I. Yahniuk,  P. Wiśniewski, B. Stonio,  M. Słowikowski,  B. Grzywacz,  G. S. Simin, A. Khachapuridze, C. Skierbiszewski, K. Nowakowski-Szkudlarek, G. Muzioł, J. Przybytek, S.L. Rumyantsev, W. Knap  Invited talk
  International Symposium on Growth of III-Nitrides ISGN-7 held in Warsaw, Poland, August 5-10, 2018
• Innovative Lateral Schottky Barrier Diodes Based on GaN/AlGaN 2DEG as Building Blocks for New High Frequency Nitride Based Devices
  G. Cywiński, P. Sai, I. Yahniuk, P. Kruszewski,  P. Prystawko, M. Grabowski, K. Nowakowski-Szkudlarek, C. Skierbiszewski, G. Muzioł, D. But, A. Khachapuridze, G. S. Simin, S. L. Rumyantsev, W. Knap; Oral presentation
  WS-06 Terahertz Technologies from Fundamentals to Implementations: A Device and Application Prospective. European Microwave Week 2018, Madrid Spain.
• Towards Resonant THz Detector Devices Based on Schottky Diodes to 2DEG GaN/AlGaN
  G. Cywiński, P. Sai, I. Yahniuk, P. Kruszewski, B. Grzywacz, J. Przybytek, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, W. Knap, P. Wiśniewski, B. Stonio, G. Simin, S. Rumyantsev; Oral presentation
  May 14-17, 2018, Poznań, Poland, MIKON 2018, (M34: Terahertz technology)
• Millimetre Band Detectors Based on GaN/AlGaN HEMT
  D. B. But, P. Sai, I. Yahniuk, G. Cywiński, N. Dyakonova, W. Knap, Z. Bo-Wen, Y. Wei, L. Zhao Feng, Y. Fu-Hua; Oral presentation
  May 14-17, 2018, Poznań, Poland, MIKON 2018, (M30: Milimeter-wave and sub-THz technology)
• Low frequency noise in wire-channel GaN/AlGaN transistors
  G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev Oral presentation
  8th International Conference on Unsolved Problems on Noise-Gdańsk University of Technology, Gdańsk, 9-13 July 2018 (Oral)
• EdgeFET Based on AlGaN/GaN with Two Lateral Schottky Barrier Gates Towards Resonant Terahertz Detection
  P. Sai, D. B. But, K. Nowakowski-Szkudlarek, J. Przybytek, P. Prystawko, I. Yahniuk, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap, G. Cywiński Contributed talk
  RJUSE 2018 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies & 4th TERAMIR International Laboratory Workshop, September 17-21, 2018, Warsaw
• · AlGaN/GaN field effect transistor with lateral Schottky barrier gate as sub-millimeter detector
  Pavlo Sai, D.B. But, P. Prystawko, I. Yahniuk, K. Nowakowski-Szkudlarek, J. Przybytek, S.L. Rumyantsev, W. Knap, G. Cywiński
  Oral presentation
  47th International School & Conference on the Physics of Semiconductors
  "Jaszowiec 2018" Szczyrk, Poland, June 16th - 22nd, 2018

Plakaty (2018)

• Towards electrically driven sub-THz GaN/AlGaN based detector
  P. Sai et al. Poster presentation
  6th EOS Topical Meeting on Terahertz Science & Technology (TST 2018), Berlin, Germany

2017

Konferencje (2017)

• Noise Limitations of GaN Lateral Schottky Diodes for THz Applications
  G. Cywiński, I. Yahniuk, K. Szkudlarek, P. Kruszewski, G. Muzioł, C. Skierbiszewski, A. Khachapuridze, W. Knap, D. But, and S. L. Rumyantsev
  Published in: Noise and Fluctuations (ICNF), 2017 International Conference on
  Conference Location: Vilnius, Lithuania
• THz Imaging and Wireless Communication Using Nanotransistor Based Detectors: From Basic Physics to First Real World Applications
  W. Knap, G. Cywinski, M. Sypek, N. Dyakonova, D. Coquillat, K. Szkudlarek, I. Yahniuk, C. Archier, B. Moulin, M. Triki, M. M. Hella, V. Nodjiadjim, M. Riet, and A. Konczykowska
  Published in: Transparent Optical Networks (ICTON), 2017 19th International Conference on, IEEE ICTON 2017