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Project NCN Sonata Bis
Groups - TeraGaN |
Based on the decision of the Director of National Science Centre (Poland) DEC-2016/22/E/ST7/00526 the Sonata BIS project "Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structures" has been granted.
Principal Investigator Dr. Grzegorz Cywiński
Realization period 2017-04-04 do 2022-04-03 (60 months)
Reg. No. 2016/22/E/ST7/00526
Publications
2021
- Graphene/AlGaN/GaN RF Switch
Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev and Grzegorz Cywinski
Published: 31 October 2021
Micromachines 2021, 12, 1343.
https://www.mdpi.com/2072-666X/12/11/1343
https://doi.org/10.3390/mi12111343
IF 2.891 - Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting
P. Sai, S. O. Potashin, M. Szoła, D. Yavorskiy, G. Cywiński, P. Prystawko, J. Łusakowski, S. D. Ganichev, S. Rumyantsev, W. Knap, and V. Yu. Kachorovskii
Phys. Rev. B 104, 045301 (2021) - Published 2 July 2021
https://journals.aps.org/prb/pdf/10.1103/PhysRevB.104.045301
IF 3.575 - Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.
Dub, M.; Sai, P.; Sakowicz, M.; Janicki, L.; But, D.B.; Prystawko, P.; Cywinski, G.; Knap,W.; Rumyantsev, S.
Published: 19 June 2021
Micromachines 2021, 12, 721.
https://doi.org/10.3390/mi12060721
IF 2.891
Conferences (2021)
- THz photocurrent magneto-oscillations in GaN-based asymmetric grating gate structures
P. Sai, M. Szoła, S.O. Potashin, D. Yavorskiy, G. Cywiński, P. Prystawko, J. Łusakowski, S. D. Ganichev, S. Rumyantsev, V. Yu. Kachorovskii, W. Knap
46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2021, pp. 1-2, doi: 10.1109/IRMMW-THz50926.2021.9567574. - AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime
M. Sakowicz, P. Sai, D. B. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev, W. Knap
Proceedings Volume 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV; 116850C (2021)
https://doi.org/10.1117/12.2576870
Event: SPIE OPTO, 2021, Online Only
2020
- Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap and Sergey Rumyantsev
MDPI Materials 2020, 13, 4140
IF 3.057
Conferences (2020)
Oral presentations
- Sub-Terahertz Detection by Fin-Shaped GaN/AlGaN Transistors
P. Sai, D. B. But, G. Cywiński, M. Dub, M. Sakowicz, P. Prystawko, S. L. Rumyantsev, and W. Knap,
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII Conference, February 1-6, 2020 San Francisco, California, United States. - Combination of laser and e-beam lithography for large area submicron grating-gate AlGaN/GaN THz devices
P. Sai, M. Słowikowski, M. Filipiak, P. Wiśniewski, G. Cywiński, M. Sakowicz, P. Prystawko, S. Rumyantsev, W. Knap
33rd International Microprocesses and Nanotechnology Conference (MNC 2020), 9-12 November, 2020, Japan (online conference).
- Low frequency noise and trap density in GaN/AlGaN field effect transistors
P. Sai, J. Jorudas, M. Dub, M. Sakowicz, V. Jakštas, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap and S. Rumyantsev
Appl. Phys. Lett. 115, 183501 (2019)
IF 3.521 - Magneto-transport in inverted HgTe quantum wells
Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki, Benoit Jouault, Christophe Consejo, Wilfried Desrat, Magdalena Majewicz, Alexander M. Kadykov, Kirill E. Spirin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dmytro B. But, Frederic Teppe, Jerzy Wróbel, Grzegorz Cywiński, Sławomir Kret, Tomasz Dietl & Wojciech Knap
npj Quantum Materials 4, Article number: 13 (2019) - AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap and G. Cywiński
Semiconductor Science and Technology 34 (2019) 024002
IF 2.28 - Features of the Formation of Ohmic Contacts to n+-InN
P.O. Sai, N.V. Safryuk-Romanenko, D.B. But, G. Cywiński, N.S. Boltovets, P.N. Brunkov, N.V. Jmeric, S.V. Ivanov, V.V. Shynkarenko
Ukrainian Journal of Physics, 64(1), 56 (2019)
Conferences (2019)
Oral presentations
- Optimization of AlGaN/GaN EdgeFETs for terahertz detection by optimization of ohmic contacts
M. Dub, M. Sakowicz, P. Sai, D. B. But, P. Prystawko, G. Cywiński,S. Rumyantsev, W. Knap
Lithuania-Poland Workshop on Physics and Technology, Vilnius (2019), Lithuania - Electrical and noise characteristics of lateral GaN/AlGaN. Schottky diodes and FETs for THz applications
P. Sai
French-German Terahertz Conference (FGTC2019), Kaiserslautern, Germany - Sub-terahertz detection by lateral GaN/AlGaN devices
P. Sai
French-German Terahertz Conference (FGTC2019), Kaiserslautern, Germany - AlGaN/GaN EdgeFET with two lateral Schottky barrier gates as detector in sub-THz range
P. Sai, D. B. But, G. Cywiński, S. Rumyantsev, M. Sakowicz, M. Dub, P. Prystawko, W. Knap
XI Symposium of Ph.D Students, Serock, Poland - Sub-THz detection by lateral high electron mobility devices based on AlGaN/GaN heterostructures
P. Sai, D. B. But, G. Cywiński, S. Rumyantsev, M. Sakowicz, M. Dub, W. Knap
Jaszowiec 2019, Szczyrk -International School and Conference on the Physics of Semiconductors - Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation
P. Sai, D. B. But, M. Dub, M. Sakowicz, B. Grzywacz, P. Prystawko, G. Cywinski,, W. Knap, S. Rumyantsev
ESSDERC-ESSCIRC Conference (2019), Cracow, Poland - Noise Characterization of GaN/AlGaN High Electron Mobility Transistor
P. Sai, J. Jorudas, M. Dub, M. Sakowicz, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap, S. Rumyantsev
French-Polish THz Science and Technology Meeting (2019), Warsaw, Poland - AlGaN/GaN Heterostructures for Plasma Wave Detection and Emission in THz Regime
M. Sakowicz, P. Sai, D. B. But, G. Cywiński, M. Dub, I. Kasalynas, P. Prystawko, S. Rumyantsev, W. Knap
CENTERA THz DAYS 2019, Warsaw, Poland (invited talk) - THz Detectors Based on GaN/AlGaN Lateral Schottky Barrier Diodes
G. Cywiński, P. Sai, M. Dub, M. Sakowicz, D. B. But, P. Prystawko, W. Knap, S. Rumyantsev
French-Polish THz Science and Technology Meeting (2019), Warsaw, Poland
Poster presentations
- Optimization of Al/GaN EdgeFETs for terahertz detection by regrowth of ohmic contacts
M. Dub, M. Sakowicz, P. Sai, D. But, P. Prystawko, G. Cywiński, S. Rumyantsev, W. Knap
Jaszowiec 2019, Szczyrk -International School and Conference on the Physics of Semiconductors - Edge FET Terahertz Detector Based on Two Lateral Schottky Barrier Gates
P. Sai
Joint ITN CELTA & TeraApp Summer School 29th International Travelling Summer School on Microwaves and Lightwaves (2019), Frankfurt, Germany
2018
- Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev
Appl. Phys. Lett. 112, 133502 (2018)
IF 3.411 - An effective method for antenna design in field effect transistor terahertz detectors
Zhang Bo-Wen, Yan Wei, Li Zhao-Feng, Bai Long, Cywinski Grzegorz, Yahniuk Ivan, Szkudlarek Krzesimir, Skierbiszewski Czesław, Przybytek Jacek, But Dmytro B., Coquillat Dominnique, Knap Wojciech, Yang Fu-Hua
The Journal of Infrared and Millimeter Waves (JIRMW) 37, 398-392, (2018)
IF 0.387 - THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
J. Marczewski, D. Coquillat, W. Knap, C. Kolacinskia, P. Kopyt, K. Kucharski, J. Lusakowski, D. Obrebski, D. Tomaszewski, D. Yavorskiy, P. Zagrajek, R. Ryniec, N. Palka
Opto-Electronics Review, Volume 26, Issue 4, Pages 261-269 (2018)
IF 1.156
Conferences (2018)
Oral presentations
- Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN
G. Cywinski ; P. Sai ; I. Yahniuk ; P. Kruszewski ; B. Grzywacz ; J. Przybytek ; P. Prystawko ; A. Khachapuridze; K. Nowakowski-Szkudlarek ; W. Knap ; P. Wisniewski ; B. Stonio ; G. S. Simin ; S. L. Rumyantsev
2018 22nd International Microwave and Radar Conference (MIKON), Pages: 715 - 718
IEEE Conferences (2018) - Millimetre Band Detectors Based on GaN/AlGaN HEMT
D. B. But, P. Sai, I. Yahniuk, G. Cywiński, N. Dyakonova, W. Knap, Z. Bo-Wen, Y. Wei, L. Zhao Feng, Y. Fu-Hua; Oral presentation
May 14-17, 2018, Poznań, Poland, MIKON 2018, (M30: Milimeter-wave and sub-THz technology)
- GaN-based transistors for THz radiation detection
G. Cywiński P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap Invited talk
March, 12-15, 2018, Nizhny Novgorod, Russia, XXII Symposium “Nanophysics and Nanoelectronics” - EdgeFET Devices Fabricated on 2DEG GaN/AlGaN Heterostructures for Basic and Applied Sciences
G. Cywiński, P. Sai, D.B. But, P. Prystawko, M. Grabowski, P. Kruszewski, I. Yahniuk, P. Wiśniewski, B. Stonio, M. Słowikowski, B. Grzywacz, G. S. Simin, A. Khachapuridze, C. Skierbiszewski, K. Nowakowski-Szkudlarek, G. Muzioł, J. Przybytek, S.L. Rumyantsev, W. Knap Invited talk
International Symposium on Growth of III-Nitrides ISGN-7 held in Warsaw, Poland, August 5-10, 2018 - Innovative Lateral Schottky Barrier Diodes Based on GaN/AlGaN 2DEG as Building Blocks for New High Frequency Nitride Based Devices
G. Cywiński, P. Sai, I. Yahniuk, P. Kruszewski, P. Prystawko, M. Grabowski, K. Nowakowski-Szkudlarek, C. Skierbiszewski, G. Muzioł, D. But, A. Khachapuridze, G. S. Simin, S. L. Rumyantsev, W. Knap; Oral presentation
WS-06 Terahertz Technologies from Fundamentals to Implementations: A Device and Application Prospective. European Microwave Week 2018, Madrid Spain. - Towards Resonant THz Detector Devices Based on Schottky Diodes to 2DEG GaN/AlGaN
G. Cywiński, P. Sai, I. Yahniuk, P. Kruszewski, B. Grzywacz, J. Przybytek, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, W. Knap, P. Wiśniewski, B. Stonio, G. Simin, S. Rumyantsev; Oral presentation
May 14-17, 2018, Poznań, Poland, MIKON 2018, (M34: Terahertz technology) - Millimetre Band Detectors Based on GaN/AlGaN HEMT
D. B. But, P. Sai, I. Yahniuk, G. Cywiński, N. Dyakonova, W. Knap, Z. Bo-Wen, Y. Wei, L. Zhao Feng, Y. Fu-Hua; Oral presentation
May 14-17, 2018, Poznań, Poland, MIKON 2018, (M30: Milimeter-wave and sub-THz technology) - Low frequency noise in wire-channel GaN/AlGaN transistors
G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev Oral presentation
8th International Conference on Unsolved Problems on Noise-Gdańsk University of Technology, Gdańsk, 9-13 July 2018 (Oral) - EdgeFET Based on AlGaN/GaN with Two Lateral Schottky Barrier Gates Towards Resonant Terahertz Detection
P. Sai, D. B. But, K. Nowakowski-Szkudlarek, J. Przybytek, P. Prystawko, I. Yahniuk, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap, G. Cywiński Contributed talk
RJUSE 2018 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies & 4th TERAMIR International Laboratory Workshop, September 17-21, 2018, Warsaw - · AlGaN/GaN field effect transistor with lateral Schottky barrier gate as sub-millimeter detector
Pavlo Sai, D.B. But, P. Prystawko, I. Yahniuk, K. Nowakowski-Szkudlarek, J. Przybytek, S.L. Rumyantsev, W. Knap, G. Cywiński
Oral presentation
47th International School & Conference on the Physics of Semiconductors
"Jaszowiec 2018" Szczyrk, Poland, June 16th - 22nd, 2018
Posters (2018)
- Towards electrically driven sub-THz GaN/AlGaN based detector
P. Sai et al. Poster presentation
6th EOS Topical Meeting on Terahertz Science & Technology (TST 2018), Berlin, Germany
2017
Conferences (2017)
- Noise Limitations of GaN Lateral Schottky Diodes for THz Applications
G. Cywiński, I. Yahniuk, K. Szkudlarek, P. Kruszewski, G. Muzioł, C. Skierbiszewski, A. Khachapuridze, W. Knap, D. But, and S. L. Rumyantsev
Published in: Noise and Fluctuations (ICNF), 2017 International Conference on
Conference Location: Vilnius, Lithuania - THz Imaging and Wireless Communication Using Nanotransistor Based Detectors: From Basic Physics to First Real World Applications
W. Knap, G. Cywinski, M. Sypek, N. Dyakonova, D. Coquillat, K. Szkudlarek, I. Yahniuk, C. Archier, B. Moulin, M. Triki, M. M. Hella, V. Nodjiadjim, M. Riet, and A. Konczykowska
Published in: Transparent Optical Networks (ICTON), 2017 19th International Conference on, IEEE ICTON 2017