Institute of High Pressure Physics

One of our colleagues will participate in the 3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3). This event is organized at Tohoku University (Sendai, Japan) and is a unique workshop with invited participants limited to 50 scientists from Japan and abroad.

Małgorzata Iwińska will present the results during a presentation entitled HVPE as a method for crystallizing GaN with low background impurity concentration with controllable doping - highly conductive n-type and semi-insulating material.