Thermodynamics creates a basis for microscopic understanding of the crystallization processes and the principal tool of their controls. Therefore thermodynamic investigations are the first, most coarse approach to the crystallization or synthesis of the bulk materials and thin layers. At more advanced level, the formulation also includes the chemistry of defects and solid solutions, being useful tool for creation of desired properties of materials, including semiconductors and their doping.

Thermodynamic approach is not as precise as needed for sufficient control of the crystallization processes. In addition, other properties such as transport properties are needed, therefore they are also actively investigated.

These two factors are combined in numerical simulations of the growth processes. The simulations method employ programs based on finite element method (FEM) and finite volume method (FVM).

The above described investigations may be divided into the following categories:

(i)                 Thermodynamics of two-phase systems

(ii)              Properties of single phase

(iii)            Numerical simulations; results


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