Lecture

Crystal growth: Physics, technology, and modeling

Academic year 2021-2022 Semester I

 

Stanisław Krukowski, Michał Leszczyński

IWC PAN, Sokołowska 29/37 01-142 Warszawa

 

Zbigniew Żytkiewicz

IF PAN, Al. Lotników 32-46 02-668 Warszawa

 

 

 

Description

 

The development of information technologies, includes the design and fabrication of new electronic devices of nanometer size, the emergence of new molecular diagnostic techniques (e.g. for medical purposes) requires understanding of the basics of the methods of design and fabrication of the new materials and structures. This course will cover problems of the understanding, design, fabrication and determination of the properties of nano-structures and nano-materials, forming an introduction to nanotechnology. Therefore the subject of the lecture will be devoted to the basic methods of crystal growth, both volumetric, at the macro scale, and quantum structures of the dimensions in micro and nano range. Currently, courses in physics, chemistry or material engineering in Poland, both in Warsaw and in other cities, do not include lectures on the fundamentals of crystal growth. Therefore the students working in these areas need additional training. The program proposed below includes a course in the fundamentals of crystal growth (especially of semiconductors), both from a theoretical point of view and a review of the main growth techniques and characterization methods. We assume that this course will not be an exhaustive description of the subject. Instead, it will provide a sufficient foundation for understanding the field, while providing a good starting point for further independent study in the future research work. The course is intended for PhD students that they have mastered the basics of quantum mechanics, statistical mechanics and solid state physics at the university level. At the end of the year-long lecture series we foresee a visit of the students to the crystal growth laboratories of the Institute of Physics PAS and the Institute of High Pressure Physics PAS in Warsaw. This will allow interested students to familiarize themselves with the existing experimental facilities and with details of the research work in progress.

 

Semester I

 

  1.  Growth of semiconductor bulk crystals in Poland and in the world – an overview (Michał Leszczyński - Institute of High Pressure Physics PAS) 12.10.2021

 

  1. Semiconductor epitaxy in Poland and in the world – an overview (Michał Leszczyński - Institute of High Pressure Physics PAS) 19.10.2021

 

  1. Thermodynamic equilibrium (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 26.10.2021

 

  1. Properties of crystal surfaces  (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 02.11.2021

 

  1. Thermodynamics of growth processes (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 09.11.2021

 

  1. Kinetic processes at surfaces (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 16.11.2021

 

  1. Step motion (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 23.11.2021

 

  1. Transport in vapor and liquid phase (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 30.11.2021

 

  1. Doping – point defects (Keshra Sangwal - – Lublin University of Technology) 07.12.2021

 

  1. Dislocations and other extended defects (Keshra Sangwal – Lublin University of Technology) due to PhD Seminar shifted to 21.12.2021

 

  1. Shape selection and stability during growth (Stanisław Krukowski - Institute of High Pressure Physics PAS) 04.01.2022

 

  1. Modeling of the growth in macroscale (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 11.01.2022

 

  1. Modeling of the growth in atomic scale (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 18.01.2022

 

  1. Problems to be solved (Stanislaw Krukowski - Institute of High Pressure Physics PAS) 25.01.2022

 

 

Semester II

 

I. Growth of crystals and epitaxial structures

 

  1. Growth of bulk crystals from the melt or solution. (Tomasz Słupiński - Institute of Physics PAS)  22.02.2022

 

  1. Bulk crystal growth from gas phase (Michał Boćkowski - Institute of High Pressure Physics PAS) 01.03.2022

 

  1. Epitaxy – an introduction (Zbigniew R. Żytkiewicz - Institute of Physics PAS) 08.03.2022

 

  1. Molecular beam epitaxy (Zbigniew R. Żytkiewicz - Institute of Physics PAS) 15.03.2022

 

  1. Molecular beam epitaxy of nitride semiconductors (Zbigniew R. Żytkiewicz - Institute of Physics PAS) 22.03.2022

 

  1. Gas phase epitaxy (Michał Leszczyński - Institute of High Pressure Physics PAS) 29.03.2022

 

  1. Liquid phase epitaxy and lateral overgrowth of semiconductors (Zbigniew R. Żytkiewicz - Institute of Physics PAS) 05.04.2022

 

  1. Atomic layer deposition (Elzbieta Guziewicz - Institute of Physics PAS) 12.04.2022

 

II. Characterization of crystals and epitaxial structures

 

  1. X-ray diffraction studies of crystals (Michał Leszczyński - Institute of High Pressure Physics PAS) 19.04.2022

 

  1. Selected methods of transmission electron microscopy (Sławomir Kret - Institute of Physics PAS) 26.04.2022

 

  1. Surface studies of crystals (Bogdan Kowalski - Institute of Physics PAS) 10.05.2022

 

  1. Electrical characterization of semiconductors and semiconductor based structures (Ramon Schifano - Institute of Physics PAS) 17.05.2022

 

  1. Optical properties of crystals (Piotr Perlin - Institute of High Pressure Physics PAS) 24.05.2022

 

  1. Secondary ion mass spectrometry (Paweł Michałowski – Łukasiewicz Institute of Microelectronics and Photonics) 31.05.2022

 

  1. Electronic and optical properties of graphene and other 2D materials (Andrzej Wysmołek – Faculty of Physics University of Warsaw) due to the coincidence with the Jaszowiec Conference, shifted to 14.06.2022.