SPIE Photonics West 2016

Photonics West 2016, San Francisco, USA

Clinical validation of a multi-wavelength (u.v. to visible) laser system for early detection of oral cancer, Michaelina Macluskey, Elizabeth Theaker, Peter Mossey, Fiona Ord, Jill Gouick, Univ. of Dundee (United Kingdom); Steven Nadja, Piotr Perlin, Michael Leszczynski, TopGaN Ltd. (Poland); Thomas J. Slight, Wyn Meredith, Compound Semiconductor Technologies Global Ltd. (United Kingdom); Marcel Schemmann, FOCE International Technology BV (Netherlands); Harry Moseley, Julie A. Woods, Ronan M. Valentine, Sukirti Kalra, Univ. of Dundee (United Kingdom); Michel Sperling, Raimond Dumoulin, Nicola Zaccheddu, John Sherry, Gillian Mimnagh, Winslow Mimnagh, 2M Engineering Ltd. (Netherlands). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9689-71]

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications, Stephen P. Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Michal Bockowski, Mike Leszczynski, Przemek Wisniewski, Robert Czernecki, TopGaN Ltd. (Poland); Robert Kucharski, Ammono S.A. (Poland); Scott Watson, Anthony E. Kelly, Univ. of Glasgow (United Kingdom); Malcolm A. Watson, Paul M. Blanchard, Henry J. White, BAE Systems (United Kingdom)

Comparison of high indium content InGaN quantum wells grown on c and (20-21) planes by means of time resolved photoluminescence with applied bias, Lucja Marona, Institute of High Pressure Physics (Poland); Michal Baranowski, Wroclaw Univ. of Technology (Poland); Dario Schiavon, TopGaN Ltd. (Poland); Piotr Perlin, Tadek Suski, Institute of High Pressure Physics (Poland). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9748-25]

AlGaInN laser diode technology for systems applications, Stephen P. Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Michal Bockowski, Przemek Wisniewski, TopGaN Ltd. (Poland); Robert Czernecki, Ammono S.A. (Poland); Grzegorz Targowski, TopGaN Ltd. (Poland); Scott Watson, Anthony E. Kelly, Univ. of Glasgow (United Kingdom)

International Workshop on Nitride Semiconductors IWN 2016, Tampa, USA

Session: Photodetectors, Photovoltaics, Intersubband II: Photovoltaics and Photodetectors II

Szymon Grzanka : Nitride Bhetavoltaic – Exploring the Concept

Session: Materials Characterization IV: Atomic Structure and Dislocation Effects and Late News

Anna Kafar : (Late News) Spontaneous and Stimulated Emission in InGaN Edge Emitters and Their Competition with Auger Processes

Session: Visible Devices IV: Visible Emitters: Alloy Disorder, Loss Mechanisms and Strain Engineering

Agata Bojarska : Is the Electron Blocking Layer Still Needed in Modern Designs of InGaN Laser Diodes

Session: Visible Devices VII: Light Emitters and Their Degradation

Anna Kafar : Nitride Superluminescent Diodes with Broadband Emission Spectra Realized by Step-Like Indium Profile

Agata Bojarska : (Late News) Factors Influencing InGaN Laser Diodes Degradation

SPIE Photonics Europe Meeting Brussels 2016

Rainer Michalzik, Univ. Ulm (Germany)

11:00: InGaN laser diodes and their reliability (Invited Paper), Piotr Perlin, Lucja Marona, Agata Bojarska, Institute of High Pressure Physics (Poland). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . [9892-32]

12:00: AlGaInN laser diode bar and array technology for high-power and individual addressable applications, Stephen P. Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boc´kowski, Mike Leszczyn´ski, Przemek Wisniewski, Robert Czernecki, TopGaN Ltd. (Poland); Robert Kucharski, Ammono S.A. (Poland); Gregorz Targowski, TopGaN Ltd. (Poland) . . . . . . . . . . . . . . . [9892-34]