Institute of High Pressure Physics

This year’s E-MRS Fall Meeting & Exhibit Conference is organized at the University of Technology in Warsaw, Poland on 14-17 September 2026.

Researchers from the Institute of High Pressure Physics PAS are involved in the organization of three symposia of particular relevance to the wide-bandgap and nitride semiconductor community:

• Symposium A: New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing – III
• Symposium E: Wide and ultra-wide-bandgap semiconductors challenges: from materials to applications
• Symposium J: Emerging nitride materials with novel combinations of functional properties – fundamental properties, crystallization, and prospective applications

Together, these symposia will create a highly visible forum covering GaN, AlN, AlGaN, BN, SiC, Ga₂O₃, bulk crystal growth, epitaxy, defects, characterization, power and RF devices, optoelectronics, sensing, and emerging nitride materials. Importantly, Symposium J is co-organized by Professor Hiroshi Amano of Nagoya University, Nobel Prize laureate in Physics, which further underlines the scientific prestige and international attractiveness of this topic.

Abstract submission deadline: June 1, 2026

Join us in Warsaw for an exciting exchange of ideas and collaboration opportunities!