Institute of High Pressure Physics

Scientists from our Institute will give five invited talks and five oral presentations at the international SPIE Photonics West conference in San Francisco (California, United States) on January 28 - February 2, 2023.

Invited papers:

1. Recent progress in bulk GaN crystal growth technology (Invited Paper) – Małgorzata Iwińska et al.
2. Influence of threading dislocations on performance of InGaN laser diodes – Agata Bojarska-Cieślińska et al.
3. Ion implantation of acceptors into gallium nitride (Invited Paper) - Kacper Sierakowski et al.
4. Properties of III-nitride wide quantum wells and their application to optoelectronic devices (Invited Paper) - Greg Muziol et al.
5. Tunnel junctions for new architecture of III-N devices (Invited Paper) – Czesław Skierbiszewski

Oral presentations:

1. Properties of implanted InGaN micro-LEDs with tunnel junctions - Julia Slawinska et al.
2. Ultra-compact low-loss GaN waveguides for potential large-scale Photonic Integrated Circuit (PICs) applications - Kiran Saba et al.
3. Fundamental features of a Pd-based contact on p-GaN - Iryna Levchenko et al.
4. Visible InGaN laser diodes with polarization-doped p-type layers – Piotr Perlin et al.
5. Ge doping for strain-free cladding layers in InGaN/GaN lasers - Piotr Perlin et al.

Program of the Photonics West conference and abstracts of all the presnetations are available at: https://spie.org/conferences-and-exhibitions/photonics-west/program/browse-program