Professor at Institute of High Pressure Physics,
Polish Academy of Sciences, UNIPRESS.
Warsaw, Poland
e-mail iza@unipress.waw.pl
tel. +48 604 196 155
1980 PhD degree in Theory of Semiconductors
(Institute of Physics PAS, Warsaw)
2004 Habilitation degree (Institute of Physics PAS, Warsaw)
§ Research Interests/Topics
Physics of nitride semiconductors.
First principle calculations of structural, optical and electronic properties of GaN, InN, AlN materials, their alloys and superlattices..
The study includes high pressure aspects.
§ Representative publications in the last 10 years
1. I. Gorczyca T. Suski, N. E. Christensen, A. Svane, Size effects in band gap bowing in nitride semiconducting alloys,
Phys.Rev. B 83, 153301 (2011) DOI:10.1103/PhysRevB.83.153301
2. I. Gorczyca, T. Suski, N.E.Christensen, and A.Svane, Band gap bowing in quaternary nitride semiconducting alloys,
Appl. Phys. Lett. 98, 241905 (2011) http://dx.doi.org/10.1063/1.3597795
3. S.P. Łepkowski and I. Gorczyca, Ab initio study of elastic constants in InxGa1- xN and InxAl1- xN wurtzite alloys,
Phys.Rev. B 83, 20320, (2011) DOI: 10.1103/PhysRevB.83.203201
4. I. Gorczyca T. Suski, N. E. Christensen, A. Svane, Band structure and confined Stark effect in InN/GaN superlattices,
Crystal Growth and Design, 12, 3521-3525 (2012) American Chemical Society http://dx.doi.org/10.1021/cg300315r
5. I. Gorczyca T. Suski, N. E. Christensen, A. Svane, Hydrostatic Pressure and Strain effects in short period Inn/GaN superlattices,
Appl. Phys. Lett. 101, 092104-1, 092104-5 (2012) American Institute of Physics http://dx.doi.org/10.1063/1.4748325
6. S. P. Łepkowski, I. Gorczyca, K. Stefańska, N. E. Christensen, and A. Svane
Deformation potentials in AlGaN and InGaN alloys and their impact onoptical polarization properties of nitride quantum wells
Phys. Rev. B 88, 081202(R) (2013) http://link.aps.org/doi/10.1103/PhysRevB.88.081202
7. T. Suski, T. Schulz, M. Albrecht, X. Q. Wang, I. Gorczyca, K. Skrobas, N. E. Christensen, and A. Svane
The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy,
Appl. Phys. Lett. 104, 182103 (2014) http://dx.doi.org/10.1063/1.4875558
8. I. Gorczyca, K. Skrobas, T. Suski, N. E. Christensen, and A. Svane
Band Gaps and Internal Electric Fields in Semipolar Short Period InN/GaN Superlattices
Appl. Phys. Lett. 104, 232101 (2014) http://dx.doi.org/10.1063/1.4882902
9. I. Gorczyca, K. Skrobas, T. Suski, N. E. Christensen, and A. Svane,
Band Gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys
Phys.Rev. B 93, 165302 (2016) DOI: 10.1103/PhysRevB.93.165302
10. I. Gorczyca, T. Suski, N.E. Christensen, Band gap engineering of In(Ga) N/GaN short period superlattices
Scientific Reports, 16055 (2017) https://doi.org/10.1038/s41598-017-16022-z
11. I. Gorczyca, T. Suski, N.E. Christensen, Theoretical study of nitride short period superlattices,
JOURNAL OF PHYSICS-CONDENSED MATTER 30, 063001 (2018) DOI 10.1088/1361-648X/aaa2ae
High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures,
Japanese Journal of Applied Physics 59, SA0802 PROGRESS REVIEW (2020), doi.org/10.7567/1347-4065/ab4868
13. Lucja Marona, Dario Schiavon, Michał Baranowski, Robert Kudrawiec, Iza Gorczyca, Anna Kafar, Piotr Perlin,
Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells,
Scientific Reports, 10, 1235 (2020) https://doi.org/10.1038/s41598-020-58295-x
14. I. Gorczyca, M. Wierzbowska, D. Jarosz, J. Z. Domagala, A. Reszka, D. Le Si Dang, F.Donatini, N.E. Christensen, H.Teisseyre,
Rocksalt ZnMgO Alloys for UV Applications. Origin of the Band Gap Fluctuations and Direct-Indirect Transitions, Phys.Rev. B – in print