Laboratory of Nitride Semiconductor Physics

About us

Best Poster Award granted to one of our Ph. D. students, Piotr A. Dróżdż
International Conference Jaszowiec, Poland, 2017




At the beginning of  2017, it was decided to split the the Laboratory of Semiconductors (NL2) into four new groups:

After this reorganization, the new Laboratory of Nitride Semiconductor Physics (NL-2)
is  involved in basic studies concentrated on:
  • Experiment

    • Mechanisms of Radiative and Nonradiative Recombination of Carriers
    • Effects of Electric Field and Hydrostatic Pressure on Band Structure and Light Emission in bulk and Quantum Structures of Nitrides
    • Role of spatial modification  of quantum structures and devices (e.g., substrate miscut, strain) on band gap, light emission, and doping efficiencies in quantum structures and devices
    • Electronic Transport in bulk crystals and epitaxial structures
  • Theory

    • Band structure calculations of semiconductor alloys and quantum structures (GaN-AlGaN-InGaN)

 








History

1972 - Narrow gap semiconductors

At the moment of UNIPRESS (High Pressure Research Center of the Polish Academy of Sciences) funding, i.e., in 1972, Semiconductor Laboratory constituted the research base of the Center. It was involved in the studies of narrow gap semiconductors, consisting mainly of the electronic band structure and point defect related phenomena. It was the field successfully developed by the Polish Semiconductor School led by Leonard Sosnowski. The typical compound semiconductors studied from middle of 60-ties to the beginning of 80-ties were InSb and HgTe.

1980 - Classical III-V semiconductors

Later on the main interest of the Semiconductor Laboratory moved to GaAs, AlGaAs and low dimensional systems based on arsenides. The activity concentrated on electronic band structure, transport effects and on donor dopants exhibiting strong coupling to the crystal lattice (so called DX Centers).

 

1990 - III-Nitrides: basic physical properties, epitaxial growth and devices

Since 1990-92 the main subjected of activity have switched to wide bandgap binaries of GaN, InN, AlN and their alloys. Firstly, their basic properties including electronic band structure, phonons, and point defects were studied experimentally and theoretically. Around year 2000, epitaxial growth and light emitting devices in blue range have additionally become the domains of the Laboratory. The most recent research focused on the radiative recombination in nitride quantum structures and on design and fabrication of the advanced optoelectronic devices such as laser diode arrays and superluminescent light emitting diodes.

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