MBE Laboratory

Institute of High Pressure Physics PAS

About us

MBE research group is a part of the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) "Unipress".

We focus on the development of blue and green light-emitting diodes (LEDs) and laser diodes (LDs) using plasma-assisted molecular beam epitaxy (PAMBE). We carry out the research on long-wavelength light emitters: implement improvements in structure design and optimize optical and electrical parameters of gallium nitride (GaN) based devices. We investigate crystal growth mechanisms on GaN surfaces of various polarity and crystallographic orientation. We fabricate and study nitride heterostructures with tunnel junction. We also study vertical heterojunction transistors n-p-n (GaN/InGaN/GaN) fabricated on GaN substrates using MBE.


Lately we published:
  1. Hydrogen diffusion in GaN:Mg and GaN:Si By: R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, M. Leszczyński, Journal of Alloys and Compounds 747, 354-358 Published: MAY 2018
  2. True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy By: C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, Applied Physics Express 11, 034103 Published: MAR 2018
    Full list of our publications HERE
Dr. inż. Marta Sawicka a laureate of POWROTY 4/2017 programme

Foundation for Polish Science has announced results of fourth competitions in HOMING and POWROTY programmes. One of the laureates of POWROTY 4/2017 programme is our Team member dr inż. Marta Sawicka
Her project Development of high quality InAlN - the road to strain-free nitride lasers is aimed to understand microscopic growth mechanism and finding optimal growth conditions for high quality InAlN composed of 83% Al and 17%In, that is lattice matched to GaN. Obtaining high quality InAlN by PAMBE will be crucial for enhancing parameters of currently developed edge emitting lasers and will allow manufacturing of surface emitting diodes (VCSELs),currently not available on the market.
Project will be carried in collaboration with Prof. E. Calleja's group from Technical University of Madrid theoretical physicists group of Prof. M. Załuska-Kotur from Institute of Physics PAS. Results will be tested on laser diode structures prepared together with TopGaN.

Our team

prof dr hab. Czesław

dr inż. Grzegorz
dr Henryk
dr inż. Marcin
dr inż. Marta
mgr Anna
mgr inż. Krzesimir
mgr inż. Paweł
mgr inż. Maciej
inż. Mateusz
inż. Mikołaj


Current list of our projects:

1. TeamTech

„Tunnel junction and its applications for GaN based optoelectronics”

2. N-side

"Polar GaN substrates with active N-side manufacturing and evaluation of its usefulness in epitaxy”


"Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes.”


“Short Period Superlattices for Rational (In Ga)N”


"Development of high quality InAlN – the road to strain-free nitride lasers."

List of completed projects HERE


Video (only Polish language version) recorded in 2014 - “Patent na Patent”:

From this short video you can learn about Grzegorz Muzioł PhD thesis (4:10). He explains the role of InGaN laser diode waveguide design on the optical mode leakage to GaN substrate (5:08). You can hear Prof. Czesław Skierbiszewski tellinng about the properties and applications of gallium nitride (3:25), and Prof. Piotr Perlin (TopGaN CTO) stressing the importance of innovative research for polish hi-tech business (8:34).



Institute of High Pressure Physics
Polish Academy of Sciences "UNIPRESS"
Sokołowska 29/37
01-142 Warsaw

MBE LAB location:
al. Prymasa Tysiąclecia 98
01-424 Warsaw

public transportation:
Majakowskiego - tram stop
Obozowa - bus stop


+48 22 8760351 - office
+48 22 8760324 - lab