MBE research group is a part of the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) "Unipress".
We focus on the development of blue and green light-emitting diodes (LEDs) and laser diodes (LDs) using plasma-assisted molecular beam epitaxy (PAMBE). We carry out the research on long-wavelength light emitters: implement improvements in structure design and optimize optical and electrical parameters of gallium nitride (GaN) based devices. We investigate crystal growth mechanisms on GaN surfaces of various polarity and crystallographic orientation. We fabricate and study nitride heterostructures with tunnel junction. We also study vertical heterojunction transistors n-p-n (GaN/InGaN/GaN) fabricated on GaN substrates using MBE.
We are proud to announce that dr inż. Grzegorz Muzioł and dr Henryk Turski will receive the scholarships of Ministry of Science and Higher Education. They are among 181 young scientists with esceptional scientific recors who carry out high quality research.
01.09.2018 Congratulations to Gdańsk University of Technology students who joined the research teams of TEAM-TECH and POWROTY projects of Foundation for Polish Science. Mikołaj Chlipała and Julia Sławińska work in TEAM-TECH "Tunnel junction and its applications for GaN based optoelectronics" - leaded by prof. dr hab. Czesław Skierbiszewski. Natalia Fiuczek works in POWROTY project "Development of high quality InAlN - the road to strain-free nitride lasers" - leaded by dr inż. Marta Sawicka.
13.08.2018 National Center for Research and Development granted LIDER project to dr inż Grzegorz Muzioł from MBE laboratory. He will develop distributed feedback laser diodes (DFB LDs) on GaN.
Foundation for Polish Science has announced the results of fifth competitions in HOMING and REINTEGRATION programmes. Dr Henryk Turski from MBE Laboratory is among the grant winners of HOMING programme with his project "Polarity engineering in nitride heterostructures". CONGRATULATIONS!
Current list of our projects:
„Tunnel junction and its applications for GaN based optoelectronics”
"Polar GaN substrates with active N-side manufacturing and evaluation of its usefulness in epitaxy”
"Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes.”
“Short Period Superlattices for Rational (In Ga)N”
List of completed projects HERE
Video (only Polish language version) recorded in 2014 - “Patent na Patent”:
From this short video you can learn about Grzegorz Muzioł PhD thesis (4:10). He explains the role of InGaN laser diode waveguide design on the optical mode leakage to GaN substrate (5:08). You can hear Prof. Czesław Skierbiszewski tellinng about the properties and applications of gallium nitride (3:25), and Prof. Piotr Perlin (TopGaN CTO) stressing the importance of innovative research for polish hi-tech business (8:34).
Institute of High Pressure Physics
Polish Academy of Sciences "UNIPRESS"
MBE LAB location:
al. Prymasa Tysiąclecia 98
Majakowskiego - tram stop
Obozowa - bus stop
+48 22 8760351 - office
+48 22 8760324 - lab